Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

Abstract

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.

including the suppl. information, 24 pages, accepted at Phys. Rev. Materials

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• Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films
• Superconductivity in hyperdoped Ge by molecular beam epitaxy
• Superconductivity in hole-doped germanium point contacts
• Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium