Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor

Abstract

Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but extraordinary quantum properties for a solid-state system. It might be possible to merge the two approaches, making single-crystal superconducting devices out of a semiconductor by utilizing the latest atomistic fabrication techniques. Here we propose superconducting devices made from precision hole-doped regions within a silicon (or germanium) single crystal. We analyze the properties of this superconducting semiconductor and show that practical superconducting wires, Josephson tunnel junctions or weak links, superconducting quantum interference devices (SQUIDs), and qubits are feasible. This work motivates the pursuit of "bottom-up" superconductivity for improved or fundamentally different technology and physics.

9 pages, 4 figures; (v2) Fixed math error in estimate of the hole density and critical temperature for one doped atomic layer (all other numbers and figures are unchanged); even a single doped layer may be sufficient to observe superconductivity; (v3) accepted version

References in corpus (12)

• Non-Abelian Anyons and Topological Quantum Computation
• Charge insensitive qubit design derived from the Cooper pair box
• Tunable Supercurrent Through Semiconductor Nanowires
• Decoherence of flux qubits due to 1/f flux noise
• Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature
• Improved superconducting qubit coherence using titanium nitride
• 1/f Flux Noise in Josephson Phase Qubits
• Dephasing of a superconducting flux qubit
• Magnetism in SQUIDs at Millikelvin Temperatures
• On-chip cavity quantum phonodynamics with an acceptor qubit in silicon
• Anomalous avoided level crossings in a Cooper-pair box spectrum
• Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ-layers

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• STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
• Area-selective deposition and B $\delta$-doping of Si(100) with BCl${}_3$
• Bottom-up assembly of metallic germanium
• Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
• Probing hundreds of individual quantum defects in polycrystalline and amorphous alumina
• AlCl${}_3$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
• Roadmap on Atomic-scale Semiconductor Devices
• Superconducting-semiconductor quantum devices: from qubits to particle detectors
• Silicon Superconducting Quantum Interference Device
• All silicon Josephson junctions
• Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Superconductivity in silicon: a review
• Superconductivity in hyperdoped Ge by molecular beam epitaxy
• Crystalline superconductor-semiconductor Josephson junctions for compact superconducting qubits
• Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications
• Electronic structure of boron and aluminum $\delta$-doped layers in silicon
• Phase transformation-induced superconducting aluminium-silicon alloy rings
• $L^p$-operator algebras associated with oriented graphs
• Classical simulation of qubit by a new hardware design and its applications
• A model for atomic precision p-type doping with diborane on Si(100)-2$\times$1
• Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium
• Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)