Silicon Superconducting Quantum Interference Device

Abstract

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

Published in Applied Physics Letters (August 2015)

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Cited by in corpus (7)

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• Josephson Coupling in the Dissipative State of a Thermally Hysteretic $\mu$-SQUID
• All silicon Josephson junctions
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Superconductivity in silicon: a review
• Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications
• Electronic structure of boron and aluminum $\delta$-doped layers in silicon