106 citations · 311 across the 16 of their papers we have counts for
16 papers
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
Chern junctions in Moiré-Patterned Graphene/PbI2
Sun Yan, M. Monteverde, V. Derkach +5
Expanding the moire material library continues to unlock novel quantum phases and emergent electronic behaviors. Here, we introduce PbI2 into the moire family and investigate the m…
Tuning superconductivity in nanosecond laser annealed boron doped epilayers
S. Nath, I. Turan, L. Desvignes +8
Superconductivity in ultra-doped epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the so…
STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si B
G. Hallais, G. Patriarche, L. Desvignes +2
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…
Evidence of boron pairs in highly boron laser doped silicon
Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…
Strongly non-linear superconducting silicon resonators
P. Bonnet, F. Chiodi, D. Flanigan +4
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitab…