Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films

Abstract

Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations ($n_{\text{h}}=4.15\times 10^{21}$~cm${}^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\text{c}}=3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform.