53 citations · 168 across the 18 of their papers we have counts for
20 papers
Effect of Buried-Interface Preparation for Nb Superconducting Resonators on InP
Logan S. Kusher, Ding Peng, Zihua Zhu +14
Substrate surface preparation is a key step in the fabrication of electronic devices. In III--V semiconductor platforms, e.g. used in HEMTs and lasers, removal of the native substr…
Device characterization of SiSiGe double quantum dots using exchange oscillations in Earth's magnetic field
Holly G. Stemp, Harry Hanlim Kang, Chih Hwan Yang +6
Exchange-based semiconductor qubits encompass a broad family of encodings constructed from singlet- and triplet-like spin states, several of which are compatible with operation at…
Crystalline Germanium Josephson Junctions
Frederik H. Knudsen, Axel Leblanc, Yiliu Li +8
Conventional superconducting quantum electronics rely on well-established Josephson junctions made of Al/AlO where the weak link AlO is amorphous and is believed to hos…
Interplay of superconductivity and ferromagnetism in ferromagnetic semiconductor-based Josephson junctions
Hirotaka Hara, Lukas Baker, Axel Leblanc +8
The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Her…
Epitaxial stabilization of magnetic GdAuSb/LaAuSb superlattices
Patrick J. Strohbeen, Soohyun Im, Tamalika Samanta +7
We report the epitaxial stabilization of GdAuSb films and GdAuSb/LaAuSb superlattices via molecular beam epitaxy on (0001)-oriented AlO substrates. GdAuSb crystallize i…
Superconductivity in Substitutional Ga-Hyperdoped Ge Epitaxial Thin Films
Julian A. Steele, Patrick J. Strohbeen, Carla Verdi +12
Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equili…
Machine learning analysis of structural data to predict electronic properties in near-surface InAs quantum wells
Patrick J. Strohbeen, Abtin Abbaspour, Amara Keita +12
Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materia…
Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction
Bassel Heiba Elfeky, Krishna Dindial, David S. Brandão +13
By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniq…
Molecular beam epitaxy growth of superconducting tantalum germanide
Patrick J. Strohbeen, Tathagata Banerjee, Aurelia M. Brook +7
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly…
Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits
William M. Strickland, Lukas J. Baker, Jaewoo Lee +9
The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quan…
Superconductivity in hyperdoped Ge by molecular beam epitaxy
Patrick J. Strohbeen, Aurelia M. Brook, Wendy L. Sarney +1
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal o…
Selective area epitaxy of GaAs films using patterned graphene on Ge
Zheng Hui Lim, Sebastian Manzo, Patrick J. Strohbeen +3
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for g…
Quantifying Mn diffusion through transferred versus directly-grown graphene barriers
Patrick J. Strohbeen, Sebastian Manzo, Vivek Saraswat +3
We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer…
Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
Sebastian Manzo, Patrick J. Strohbeen, Zheng-Hui Lim +3
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale…
Solid phase epitaxial growth of the correlated-electron transparent conducting oxide SrVO3
Samuel D. Marks, Lin Lin, Peng Zuo +11
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 fil…
Electronic correlations in the semiconducting half-Heusler compound FeVSb
Estiaque H. Shourov, Patrick J. Strohbeen, Dongxue Du +8
Electronic correlations are crucial to the low energy physics of metallic systems with localized and states; however, their effect on band insulators and semiconductors is…
Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
Estiaque H. Shourov, Ryan Jacobs, Wyatt A. Behn +8
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition or ) are highly sensitive to stoichiometry and defects. Here we…
Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B
Dongxue Du, Patrick J. Strohbeen, Hanjong Paik +6
A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theor…
High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb
Dongxue Du, Amber Lim, Chenyu Zhang +7
Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name "polar metal," however, most well-studie…
Electronically enhanced layer buckling and Au-Au dimerization in epitaxial LaAuSb films
Patrick J. Strohbeen, Dongxue Du, Chenyu Zhang +5
We report the molecular beam epitaxial growth, structure, and electronic measurements of single-crystalline LaAuSb films on AlO (0001) substrates. LaAuSb belongs to a broad…