Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ-layers

Abstract

We report low-frequency 1/f noise measurements of degenerately doped Si:P δ-layers at 4.2K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was found to be nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude

arXiv comment4 pages, 4 figures

References in corpus (5)

• Atomically precise placement of single dopants in Si
• Spin transport and quasi 2D architectures for donor-based quantum computing
• Observation of non-gaussian conductance fluctuations at low temperatures in Si:P(B) at the metal-insulator transition
• Universal conductance fluctuations in three dimensional metallic single crystals of Si
• Nanoscale ferromagnetism in non-magnetic doped semiconductors

Cited by in corpus (7)

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• Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
• Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers