42 citations · 152 across the 11 of their papers we have counts for
11 papers
Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…
Femtosecond Transfer and Manipulation of Persistent Hot-Trion Coherence in a Single CdSe/ZnSe Quantum Dot
Philipp Henzler, Christian Traum, Matthias Holtkemper +8
Ultrafast transmission changes around the fundamental trion resonance are studied after exciting a p-shell exciton in a negatively charged II-VI quantum dot. The biexcitonic induce…
Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +4
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges…
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…
Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures
Krista R Khiangte, Jaswant S Rathore, Sudipta Das +5
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural…