42 citations · 152 across the 11 of their papers we have counts for
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Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…
Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates
Krista R Khiangte, Jaswant S Rathore, Vaibhav Sharma +2
A mechanism of controlling the degree of strain relaxation in GeSn epilayers, grown by molecular beam epitaxy on Ge/Si(001) substrates, is reported in this work. It is demonstrated…
Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy
Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…