activity
20152022
most citedInterplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

30 citations · 194 across the 15 of their papers we have counts for

collaborators

16 papers

cond-mat.mtrl-sci2022★ 3 cited

On Curie temperature of B20-MnSi films

Zichao Li, Ye Yuan, Viktor Begeza +5

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechani…

cond-mat.mtrl-sci2021

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Zichao Li, Ye Yuan, René Hübner +8

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the r…

cond-mat.mtrl-sci2019★ 4 cited

p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Chi Xu, Chenhui Zhang, Mao Wang +7

In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…

cond-mat.mtrl-sci2019★ 1 cited

Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors

Chi Xu, Mao Wang, Ye Yuan +3

A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is p…

cond-mat.mtrl-sci2019★ 23 cited

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

Slawomir Prucnal, Viton Heera, René Hübner +11

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…

cond-mat.mtrl-sci2018★ 15 cited

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Yufang Xie, Ye Yuan, Mao Wang +7

Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) su…

cond-mat.mtrl-sci2018★ 26 cited

Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films

Ciarán Fowley, Karsten Rode, Yong-Chang Lau +12

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet MnRuGa in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over…

cond-mat.mtrl-sci2018

CMOS-compatible controlled hyperdoping of silicon nanowires

Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…

cond-mat.mtrl-sci2018★ 5 cited

Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction

Ye Yuan, Mao Wang, Chi Xu +6

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping t…

cond-mat.mtrl-sci2017★ 5 cited

Towards diluted magnetism in TaAs

Yu Liu, Zhilin Li, Liwei Guo +10

Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we dem…

cond-mat.mtrl-sci2017★ 30 cited

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

Ye Yuan, Chi Xu, René Hübner +6

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxA…

cond-mat.mtrl-sci2017★ 14 cited

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

Yu Liu, Ye Yuan, Fang Liu +12

Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties…

cond-mat.mtrl-sci2017★ 6 cited

Investigation of a possible electronic phase separation in the magnetic semiconductors GaMnAs and GaMnP by means of fluctuation spectroscopy

Martin Lonsky, Jan Teschabai-Oglu, Klaus Pierz +6

We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic GaMnAs epitaxial thin films covering a large parameter space in…

cond-mat.mtrl-sci2016★ 19 cited

Suppressing the cellular breakdown in silicon supersaturated with titanium

Fang Liu, S Prucnal, R Hübner +4

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted S…

cond-mat.mtrl-sci2016★ 25 cited

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Shengqiang Zhou, Lin Li, Ye Yuan +11

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…

cond-mat.mtrl-sci2015★ 18 cited

Intrinsic diamagnetism in the Weyl semimetal TaAs

Yu Liu, Zhilin Li, Liwei Guo +6

We investigate the magnetic properties of TaAs, a prototype Weyl semimetal. TaAs crystals show weak diamagnetism with magnetic susceptibility of about -7 * 10^{-7} emu/(g*Oe) at 5…