Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

Abstract

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in In1-xMnxAs compared to Ga1-xMnxAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition.

arXiv comment23 pages, 10 figures, to appear at Phys. Rev. Mater

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• Magnetic properties of wurtzite (Ga,Mn)As
• Nematicity of correlated systems driven by anisotropic chemical phase separation
• Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism
• Investigation of a possible electronic phase separation in the magnetic semiconductors Ga${}_{1-x}$Mn${}_x$As and Ga${}_{1-x}$Mn${}_x$P by means of fluctuation spectroscopy
• Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction
• p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
• Spin relaxation in diluted magnetic semiconductors. GaMnAs as example
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