Tailoring the magnetism of GaMnAs films by ion irradiation
arXiv:1012.1678 · doi:10.1088/0022-3727/44/4/045001
Abstract
Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.
15 pages, 4 figures, accepted for publication at J. Phys. D
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