Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

Abstract

The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.

3 pages, 4 figures, MMM conference proceedings

References in corpus (2)

• Anomalous Hall effect in ferromagnetic semiconductors
• High quality GaMnAs films grown with As dimers

Cited by in corpus (22)

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