activity
19982017
most citedCurrent-polarity dependent manipulation of antiferromagnetic domains

157 citations · 226 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2017★ 157 cited

Current-polarity dependent manipulation of antiferromagnetic domains

P. Wadley, S. Reimers, M. J. Grzybowski +11

Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external mag…

cond-mat.mes-hall2003★ 6 cited

Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field

A. W. Rushforth, B. L. Gallagher, P. C. Main +4

We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the su…

cond-mat.mtrl-sci2002

Anisotropic Magnetoresistance in GaMnAs films

K. Y. Wang, K. W. Edmonds, R. P. Campion +5

The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The aniso…

cond-mat.mtrl-sci2002★ 63 cited

Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

K W Edmonds, R P Campion, K-Y Wang +4

The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic…

cond-mat.mes-hall1998

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

J. G. S. Lok, A. K. Geim, B. Tieke +5

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances an…