Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field
arXiv:cond-mat/0308452 · doi:10.1103/PhysRevB.70.193313
Abstract
We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to the changing topology of the quasi-random magnetic field in which electrons are guided predominantly along contours of zero magnetic field.
arXiv comment4 pages, 6 figures, submitted to Phys. Rev. B
References in corpus (4)
- Quantum Transport in Semiconductor Nanostructures
- Zero-frequency anomaly in quasiclassical ac transport: Memory effects in a two-dimensional metal with a long-range random potential or random magnetic field
- Quantum Hall ferromagnets, cooperative transport anisotropy, and the random field Ising model
- Non-adiabatic scattering of a classical particle in an inhomogeneous magnetic field
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