activity
19982005
most cited1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

3 citations · 3 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.dis-nn20053 cited

1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

G. Deville, R. Leturcq, D. L'Hote +3

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resist…

cond-mat.mes-hall2005

Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction

D. Yu. Ivanov, M. V. Chukalina, E. G. Takhtamirov +8

Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spi…

cond-mat.mes-hall2005

Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition

Yu. V. Dubrovskii, V. A. Volkov, L. Eaves +5

Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces…

cond-mat.soft2001

Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunneling

E. E. Vdovin, Yu. N. Khanin, A. V. Veretennikov +7

We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semic…

cond-mat.mes-hall1998

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

J. G. S. Lok, A. K. Geim, B. Tieke +5

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances an…