Phase coherent transport in (Ga,Mn)As

Abstract

Quantum interference effects and resulting quantum corrections of the conductivity have been intensively studied in disordered conductors over the last decades. The knowledge of phase coherence lengths and underlying dephasing mechanisms are crucial to understand quantum corrections to the resistivity in the different material systems. Due to the internal magnetic field and the associated breaking of time-reversal symmetry quantum interference effects in ferromagnetic materials have been scarcely explored. Below we describe the investigation of phase coherent transport phenomena in the newly discovered ferromagnetic semiconductor (Ga,Mn)As. We explore universal conductance fluctuations in mesoscopic (Ga,Mn)As wires and rings, the Aharonov-Bohm effect in nanoscale rings and weak localization in arrays of wires, made of the ferromagnetic semiconductor material. The experiments allow to probe the phase coherence length L_phi and the spin flip length L_SO as well as the temperature dependence of dephasing.

22 pages, 10 figures

References in corpus (19)

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• Ferromagnetic semiconductors
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• Energy spectra of quantum rings
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• Weak localization in ferromagnets with spin-orbit interaction
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• Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs
• Magnetism in (Ga,Mn)As Thin Films With TC Up To 173K
• Weak localization in ferromagnetic (Ga,Mn)As nanostructures
• Dephasing in (Ga,Mn)As nanowires and rings
• Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: structural and spin disorder
• Weak localisation in AlGaAs/GaAs p-type quantum wells
• Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As

Cited by in corpus (5)

• In search of antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction
• Scaling relation of the anomalous Hall effect in (Ga,Mn)As
• Theory of Weak Localization in Ferromagnetic (Ga,Mn)As
• Quantum transport in ferromagnetic Permalloy nanostructures
• Direct probing of band-structure Berry phase in diluted magnetic semiconductors