Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As
arXiv:0711.3278 · doi:10.1103/PhysRevB.77.041306
Abstract
We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show, that the conductivity decrease follows a ln() dependency in 2D films and a dependency in 1D wires and is independent of an applied magnetic field. This behavior can be explained by the theory of electron-electron interaction.
4 pages, 2 figures, v2: spelling of author name corrected
References in corpus (6)
- Mn Interstitial Diffusion in (Ga,Mn)As
- Anisotropic Magnetoresistance in GaMnAs
- Weak localization in ferromagnetic (Ga,Mn)As nanostructures
- Disorder-Induced Resistive Anomaly Near Ferromagnetic Phase Transitions
- Scaling theory of magneto-resistance in disordered local moment ferromagnets
- Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory
Cited by in corpus (9)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
- All electrical measurement of the density of states in (Ga,Mn)As
- Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
- Quantum transport in ferromagnetic Permalloy nanostructures
- Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
- Magnetic properties of wurtzite (Ga,Mn)As
- Phase coherent transport in (Ga,Mn)As
- Amplification of the induced ferromagnetism in diluted magnetic semiconductor