Amplification of the induced ferromagnetism in diluted magnetic semiconductor

Abstract

Magnetic properties of the planar structure consisting of a ferromagnetic metal and the diluted magnetic semiconductor are considered (by the example of the structure Fe/Ga(Mn)As, experimentally studied in [F. Maccherozzi, e.a., Phys. Rev. Lett., 101, 267201 (2008)]). In the framework of the mean field theory, we demonstrate the presence of the significant amplification of the ferromagnetism, induced by the ferromagnetic metal in the near-interface semiconductor area, due to the indirect interaction of magnetic impurities. This results in the substantial expansion of the temperature range where the magnetization in the boundary semiconductor region exists, that might be important for possible practical applications.

References in corpus (5)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Ferromagnetism in magnetically doped III-V semiconductors
• Achieving High Curie Temperature in (Ga,Mn)As
• Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers
• Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As

Cited by in corpus (1)

• High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures