All electrical measurement of the density of states in (Ga,Mn)As
arXiv:0902.2675 · doi:10.1103/PhysRevLett.103.087203
Abstract
We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,Mn)As at the Fermi energy.
References in corpus (14)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Semiconductor Spintronics
- Achieving High Curie Temperature in (Ga,Mn)As
- Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
- On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
- Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study
- Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap
- Multiband tight-binding model of local magnetism in GaMnAs
- Optical Properties of III-Mn-V Ferromagnetic Semiconductors
- Weak localization in GaMnAs: evidence of impurity band transport
- Weak localization in ferromagnetic (Ga,Mn)As nanostructures
- Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As
- Quantum transport in ferromagnetic Permalloy nanostructures
- Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach
Cited by in corpus (17)
- Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
- Theory of spin waves in ferromagnetic (Ga,Mn)As
- Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- Euler Obstructed Cooper Pairing: Nodal Superconductivity and Hinge Majorana Zero Modes
- Unconventional temperature dependence of the anomalous Hall effect in HgCr2Se4
- Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
- Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants
- Valence-band structure of ferromagnetic semiconductor (InGaMn)As
- Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet
- Scaling relation of the anomalous Hall effect in (Ga,Mn)As
- Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
- Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band
- Anisotropic magneto-capacitance in ferromagnetic-plate capacitors
- Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors
- Iron-based n-type electron-induced ferromagnetic semiconductor