Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants

Abstract

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

arXiv comment19 pages, 4 figures

References in corpus (25)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
• Theory of ferromagnetic (III,Mn)V semiconductors
• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Ferromagnetic semiconductors
• Determination of band alignment in the single layer MoS2/WSe2 heterojunction
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr
• Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
• Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
• Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer $SL-WS{e}_2$
• Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• How Substitutional Point Defects in Two-Dimensional WS${}_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• Local Spectroscopic Characterization of Spin and Layer Polarization in WSe${}_2$
• All electrical measurement of the density of states in (Ga,Mn)As
• Excitonic Resonance Effects and Davydov Splitting in Circularly Polarized Raman Spectra of Few-Layer WSe2
• Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
• Longitudinal and transverse magnetoresistance in films with tilted out-of-plane magnetic anisotropy