Optical Properties of III-Mn-V Ferromagnetic Semiconductors

Abstract

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.

Topical Review

References in corpus (22)

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Cited by in corpus (11)

• Electrodynamics of Correlated Electron Materials
• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• Optical evidence of surface state suppression in Bi based topological insulators
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Unified picture for diluted magnetic semiconductors
• Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi${}_2$Te${}_3$ and Mn-doped Bi${}_2$Te${}_3$
• Manipulating Femtosecond Spin--Orbit Torques with Laser Pulse Sequences to Control Magnetic Memory States and Ringing
• High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
• Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
• Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
• Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band