Dynamics of Impurity and Valence Bands in GaMnAs within the Dynamical Mean Field Approximation

Abstract

We calculate the density-of-states and the spectral function of GaMnAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasi-particle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling at the Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

arXiv comment6 pages, 4 figures

References in corpus (7)

• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Mn Interstitial Diffusion in (Ga,Mn)As
• Anomalous Normal-State Properties of High-T${}_c$ Superconductors -- Intrinsic Properties of Strongly Correlated Electron Systems?
• Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$
• Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
• Ellipsometric study of the Electronic Structure of GaMnAs and LT-GaAs
• Transition Temperature of a Magnetic Semiconductor with Angular Momentum j

Cited by in corpus (7)

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• Electron correlations in Mn${}_x$Ga${}_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory
• Carrier induced ferromagnetism in diluted local-moment systems
• Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach
• Theoretical study of optical conductivity of graphene with magnetic and nonmagnetic adatoms
• Strong interplay between electron-phonon interaction and disorder in low doped systems
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs