Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

Abstract

We formulate a theory of doped magnetic semiconductors such as Ga${}_{1-x}$Mn${}_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.

4 pages, 4 figures

References in corpus (2)

• First principles study of the origin and nature of ferromagnetism in (Ga,Mn)As
• Ferromagnetism in magnetically doped III-V semiconductors

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