Ferromagnetic ordering in dilute magnetic dielectrics with and without free carriers
arXiv:0809.2005 · doi:10.1016/j.jmmm.2008.11.029
Abstract
The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may either favor ferromagnetism with high Curie temperature or result in highly inhomogeneous state without long-range magnetic order. In both case concomitant defects (vacancies, interstitial ions play crucial part.
10 pages, 3 figures. The paper was presented at the Moscow Internation Symposium on Magnetism (MISM-08). To be published in Journ. Magnetism and Magnetic Materials
References in corpus (7)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator
- Electronic Structure and Optical Properties of the Co-doped Anatase TiO Studied from First Principles
- Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
- The role of transition metal impurities and oxygen vacancies in the formation of ferromagnetism in Co-doped TiO2
- Superexchange in Dilute Magnetic Dielectrics: Application to (Ti,Co)O_2
- Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2