Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers

Abstract

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in the total moment below that expected for full saturation of all the Mn spins. These results suggest that the spin state of the non-ferromagnetic Mn spins is energetically well separated from the ferromagnetism of the bulk of the spins. We have also studied the coercive field (Hc) as a function of temperature and Mn concentration, finding that Hc decreases with increasing Mn concentration as predicted theoretically.

arXiv comment15 total pages -- 5 text, 1 table, 4 figues. Accepted for publication in MMM 2002 conference proceedings (APL)

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Cited by in corpus (8)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga${}_{1-x}$Mn${}_x$As/Ga${}_{1-y}$Al${}_y$As:Be
• Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs
• Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
• Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
• Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs
• Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
• Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers