Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs
arXiv:cond-mat/0312259 · doi:10.1063/1.1787945
Abstract
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Curie temperature of the ferromagnet (T_C = 55.1 +- 0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field.
arXiv commentpdf file only; submitted to Applied Physics Letters
References in corpus (5)
- Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
- Electrical detection of spin accumulation in a p-type GaAs quantum well
- Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
- Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions
- Coercive Field and Magnetization Deficit in Ga(1-x)Mn(x)As Epilayers
Cited by in corpus (12)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
- Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
- Control of Coercivities in (Ga,Mn)As Thin Films by Small Concentrations of MnAs Nanoclusters
- Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal
- Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
- Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures
- Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO
- Exchange bias in GeMn nanocolumns: the role of surface oxidation
- Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions
- Annealing-dependence of Exchange Bias in MnO/Ga1-xMnxAs Heterostructures