Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

Abstract

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

3 figures, submitted to Physical Review B

References in corpus (6)

• Achieving High Curie Temperature in (Ga,Mn)As
• Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga${}_{1-x}$Mn${}_x$As/GaAs:Be
• In search of antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction
• Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
• (Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling
• Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

Cited by in corpus (2)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling