Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

Abstract

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.

Submitted tp Phys. Rev. B

References in corpus (7)

• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
• Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga${}_{1-x}$Mn${}_x$As/GaAs:Be
• Current-induced noise and damping in non-uniform ferromagnets
• Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers
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• Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

Cited by in corpus (4)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures
• Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure
• Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices