Theory of carrier mediated ferromagnetism in dilute magnetic oxides
arXiv:cond-mat/0603182 · doi:10.1016/j.aop.2007.01.010
Abstract
We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to ~700 K).
10 pages, 3 figures; formulae and references added, discussion extended
References in corpus (5)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Room temperature magneto-optics of ferromagnetic transition-metal doped ZnO thin films
- Spatial structure of an individual Mn acceptor in GaAs
- Signature of Carrier-Induced Ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta}: Exchange Interaction Between High-Spin Co 2+ and the Ti 3d Conduction Band
- Magnetic Percolation and the Phase Diagram of the Disordered RKKY model
Cited by in corpus (5)
- Electrical transport and optical studies of ferromagnetic Cobalt doped ZnO nanoparticles exhibiting a metal-insulator transition
- Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor
- Ferromagnetism of cobalt-doped anatase TiO studied by bulk- and surface-sensitive soft x-ray magnetic circular dichroism
- Harnessing the Duality of Magnetism and Conductivity: A Review of Oxide based Dilute Magnetic Semiconductors
- Ferromagnetism in transparent Mn(II)-doped indium tin oxide films prepared by sol-gel process