Theory of carrier mediated ferromagnetism in dilute magnetic oxides
arXiv:cond-mat/0603182 · doi:10.1016/j.aop.2007.01.010
Abstract
We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to ~700 K).
arXiv comment10 pages, 3 figures; formulae and references added, discussion extended
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- Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor
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