Hall effect in cobalt-doped TiO
arXiv:cond-mat/0311041 · doi:10.1103/PhysRevB.69.073201
Abstract
We report Hall effect measurements on thin films of cobalt-doped TiO. Films with low carrier concentrations (10 - 10) yield a linear behavior in the Hall data while those having higher carrier concentrations (10 - 10) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO to Ti$_[n}$O Magneli phase(s).
References in corpus (1)
Cited by in corpus (14)
- Quantum transport theory of anomalous electric, thermoelectric, and thermal Hall effects in ferromagnets
- Co-occurrence of Superparamagnetism and Anomalous Hall Effect in Highly Reduced Cobalt Doped Rutile TiO2 Films
- Magnetic oxide semiconductors
- Theory of carrier mediated ferromagnetism in dilute magnetic oxides
- Electric Field Effect in Diluted Magnetic Insulator Anatase Co:TiO2
- Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2
- High temperature ferromagnetism in Co-implanted TiO2 rutile
- Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2
- Magnetism and charge density waves in RNiC (R = Ce, Pr, Nd)
- Room-temperature ferromagnetism in the mixtures of the TiO2 and Co3O4 powders
- X-ray Anomalous Scattering of Diluted Magnetic Oxide Semiconductors: Possible Evidence of Lattice Deformation for High Temperature Ferromagnetism
- Disorder driven crossover between anomalous Hall regimes in FeGaTe
- Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP
- Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO