Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP

Abstract

The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the band structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to conclude this interpretation; however, experimental investigations in AF materials are limited by the lack of high quality systems. In this study, we show that the AF material NbMnP, which exhibits a large AHE, offers a high quality single crystal. Our findings clearly revealed that the large AHC and the tiny net magnetization of $\sim 10^{-3}{\mu }_{\mathrm{B}}$/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in the regime where there is less impurity scattering.

11 pages, 4 figures

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Cited by in corpus (5)

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• Large spontaneous Hall effect with flexible domain control in an antiferromagnetic material TaMnP
• Spontaneous Anomalous Hall Effect at Room Temperature in Antiferromagnetic Material NbMnAs
• Accessing quasi-flat $\text{f}$-bands to harvest large Berry curvature in NdGaSi