Tailoring ferromagnetic chalcopyrites
arXiv:cond-mat/0401157 · doi:10.1038/nmat1127
Abstract
If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that band gaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and band gaps are related in magnetic semiconductors. Here we explore theoretically these and other relationships within 64 members of a single materials class, the Mn-doped II-IV-V2 chalcopyrites, three of which are already known experimentally to be ferromagnetic semiconductors. Our first-principles results reveal a variation of magnetic properties across different materials that cannot be explained by either of the two dominant models of ferromagnetism in semiconductors. Based on our results for structural, electronic, and magnetic properties, we identify a small number of new stable chalcopyrites with excellent prospects for ferromagnetism.
6 pages with 4 figures, plus 3 supplementary figures; to appear in Nature Materials
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- Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon
- Theory of Mn-doped I-II-V Semiconductors
- Tailoring Magnetism in Quantum Dots
- Piezomagnetic Quantum Dots
- Three-dimensional topological insulators: A review on host materials
- Bipolar spintronics: From spin injection to spin-controlled logic
- Prediction of polar ordered oxynitride perovskites
- Electronic States of Magnetic Quantum Dots
- Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties
- Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite
- Homogeneous limit of Cd(1-x)Mn(x)GeAs(2) alloy: electrical and magnetic properties
- A substantial increase of Curie temperature in a new type of diluted magnetic semiconductors via effects of chemical pressure
- Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors
- Point defects and p-type conductivity in Zn/1-x/Mn/x/GeAs/2/