Three-Dimensional Topological Insulators in I-III-VI and II-IV-V Chalcopyrite Semiconductors
arXiv:1008.0056 · doi:10.1103/PhysRevLett.106.016402
Abstract
The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI and II-IV-V can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.
arXiv comment5 pages, 4 figure
References in corpus (23)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Berry Phase Effects on Electronic Properties
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Topological Insulators in Three Dimensions
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Topological Field Theory of Time-Reversal Invariant Insulators
- Topological invariants of time-reversal-invariant band structures
- Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
- Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds
- Time Reversal Polarization and a Z_2 Adiabatic Spin Pump
- A new platform for topological quantum phenomena : Topological Insulator states in thermoelectric Heusler-related ternary compounds
- Manipulation of Majorana fermion, Andreev reflection and Josephson current on topological insulators
- Inverse Spin-Galvanic Effect in a Topological-Insulator/Ferromagnet Interface
- Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
- Quantum spin Hall effect in three dimensional materials: Lattice computation of Z topological invariants and its application to Bi and Sb
- Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
- Observation of Single Dirac Cone Topological Surface State in Compounds TlBiTe2 and TlBiSe2 from a New Topological Insulator Family
- Single-Dirac-Cone topological surface states in TlBiSe2 class of Topological Insulators
- Tailoring ferromagnetic chalcopyrites
- Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI Ternary Chalcogenides
Cited by in corpus (52)
- Quantum Spin Hall Effect in Silicene
- Colloquium: Topological Band Theory
- Catalogue of Topological Electronic Materials
- Computing topological invariants without inversion symmetry
- Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials
- Topological Aspect and Quantum Magnetoresistance of -AgTe
- Topological insulators and thermoelectric materials
- Transport in three-dimensional topological insulators: theory and experiment
- Ideal Weyl semimetals in the chalcopyrites CuTlSe2, AgTlTe2, AuTlTe2 and ZnPbAs2
- Topological insulators and fractional quantum Hall effect on the ruby lattice
- False-positive and False-negative assignments of Topological Insulators in Density-Functional Theory and Hybrids
- Topological insulators from the Perspective of first-principles calculations
- First-principles calculation of topological invariants Z2 within the FP-LAPW formalism
- Band Structure Engineering of Multinary Chalcogenide Topological Insulators
- Semilocal exchange-correlation potentials for solid-state calculations: Current status and future directions
- Topological phases in layered pyrochlore oxide thin films along the [111] direction
- Strain tuning of topological band order in cubic semiconductors
- Lattice distortion effects on topological phases in (LaNiO)/(LaAlO) heterostructures grown along the [111] direction
- Photoemission Spectroscopic Evidence for the Dirac Nodal Line in Monoclinic Semimetal SrAs
- Influence of tetragonal distortion on the topological electronic structure of the half-Heusler compound LaPtBi from first principles
- Effect of Strong Disorder in a 3-Dimensional Topological Insulator: Phase Diagram and Maps of the Z2 Invariant
- Strain driven onset of non-trivial topological insulating states in Zintl Sr compounds (=Pb, Sn)
- Linear response theory of interacting topological insulators
- Topological Insulators and Quantum Spin Liquids
- Manifestly gauge independent formulations of the Z2 invariants
- Three-dimensional topological insulators: A review on host materials
- Topological Phases in Triangular Lattices of Ru Adsorbed on Graphene: ab-initio calculations
- First principles calculation of shift current in chalcopyrite semiconductor ZnSnP
- Adiabatic transformation as a search tool for new topological insulators: distorted ternary LiAgSb-class semiconductors and related compounds
- Converting normal insulators into topological insulators via tuning orbital levels
- Pressure-Induced Topological Phase Transitions in CdGeSb and CdSnSb
- Generalized Slater-Pauling rule for the inverse Heusler compounds
- Prediction of topological insulating behavior in Hg2CuTi-type Heusler compounds from first principles
- Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materials AgInSe and AuInSe
- Topologically Invariant Double Dirac States in Bismuth based Perovskites: Consequence of Ambivalent Charge States and Covalent Bonding
- Weyl Semimetals with symmetry
- Fabrication and characterization of the gapless half-Heusler YPtSb thin films
- Accurate and efficient prediction of the band gaps and optical spectra of chalcopyrite semiconductors from a non-empirical range-separated dielectric-dependent hybrid: Comparison with many-body perturbation theory
- Topological phase in non-centrosymmetric material NaSnBi
- Topological Insulators in Hexagonal Wurtzite-type Binary Compounds
- Dielectric capping effects on binary and ternary topological insulator surface states
- Topological magnon in exchange frustration driven incommensurate spin spiral of a kagome lattice YMnSn
- Pressure-Driven Topological Phase Transition in the Yb Chalcogenides YbO and YbS
- A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength
- Interplay between spin-orbit coupling and crystal-field effect in topological insulators
- A first-principles investigation of band inversion in topologically nontrivial Na2AgX (X= As, Sb and Bi) full Heusler compounds
- On quasi-nodal spheres and the spin Hall effect: the case of YH3 and CaTe
- Introduction to Topological Insulators
- A first-principles investigation of Topological Phase Transition in face-centred cubic LiMgBi
- The d-p band-inversion topological insulator in bismuth-based skutterudites
- Orbital enhanced intrinsic nonlinear planar Hall effect for probing topological phase transition in CuTlSe
- Improved electronic structure prediction of chalcopyrite semiconductors from a semilocal density functional based on Pauli kinetic energy enhancement factor