Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors
arXiv:cond-mat/0501423 · doi:10.1103/PhysRevB.72.125303
Abstract
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band gap renormalization could be used as an experimental probe to determine the valence band or the impurity band nature of carrier ferromagnetism.
Revised version
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- The effect of sublattice symmetry breaking on the electronic properties of a doped graphene
- Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films
- Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons
- Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review