Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films

Abstract

Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device (SQUID) magnetometry, Raman spectroscopy, and high resolution X-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E0 electronic transition in (Ga,Mn)As, revealed significant differences between the energy band structures in vicinity of the Γ point of the Brillouin zone for the two (Ga,Mn)As films. In view of the obtained experimental results the evolution of the valence band structure in (Ga,Mn)As with increasing Mn content is discussed, pointing to a merging the Mn-related impurity band with the host GaAs valence band for high Mn content.

21 pages, 6 figures

References in corpus (9)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs
• Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
• Spatial structure of an individual Mn acceptor in GaAs
• Achieving High Curie Temperature in (Ga,Mn)As
• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Onset of ferromagnetism in low-doped GaMnAs
• Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors

Cited by in corpus (7)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
• Electronic- and band-structure evolution in low-doped (Ga,Mn)As
• Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
• Temperature stable 1.3 μm emission from GaAs
• Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers
• Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review