Strong interplay between electron-phonon interaction and disorder in low doped systems

Abstract

The effects of doping on the spectral properties of low doped systems are investigated by means of Coherent Potential Approximation to describe the distributed disorder induced by the impurities and Phonon-Phonon Non-Crossing Approximation to characterize a wide class of electron-phonon interactions which dominate the low-energy spectral features. When disorder and electron-phonon interaction work on comparable energy scales, a strong interplay between them arises, the effect of disorder can no more be described as a mere broadening of the spectral features and the phonon signatures are still visible despite the presence of strong disorder. As a consequence, the disorder-induced metal-insulator transition, is strongly affected by a weak or moderate electron-phonon coupling which is found to stabilize the insulating phase.

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Cited by in corpus (5)

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• Metal-Insulator Transition and Emergent Gapped Phase in the Surface-Doped 2D Semiconductor 2H-MoTe${}_2$
• Unconventional Bloch-Grüneisen scattering in hybrid Bose-Fermi systems
• Formation and observation of a quasi-two-dimensional $d_{xy}$ electron liquid in epitaxially stabilized Sr${}_{2-x}$La${}_x$TiO${}_4$ thin films
• Polaronic quantum diffusion in dynamic localization regime