Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors

Abstract

The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high $T$ contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely enhance the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window $150K<T<300K$. The results are discussed in connection with experimental data of rubrene organic field-effect transistors.

4 pages, 3 figures

References in corpus (5)

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Cited by in corpus (6)

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• The polaron paradigm: a dual coupling effective band model
• Magnetic effects on nonlinear mechanical properties of a suspended carbon nanotube
• Single-parameter adiabatic charge pumping in carbon nanotube resonators
• Effects of different electron-phonon couplings on spectral and transport properties of small molecule single-crystal organic semiconductors
• Strong interplay between electron-phonon interaction and disorder in low doped systems