Current saturation and Coulomb interactions in organic single-crystal transistors
arXiv:0710.2845 · doi:10.1088/1367-2630/10/3/033031
Abstract
Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase linearly with the density of charge carriers, and tends to saturate. At the same time, the activation energy for transport unexpectedly increases with increasing n. We perform a theoretical analysis in terms of a well-defined microscopic model for interacting Frohlich polarons, that quantitatively accounts for our experimental observations. This work is particularly significant for our understanding of electronic transport through organic FETs.
Extended version with 1 additional figure and an appendix explaining the consistency of the theoretical calculation
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Cited by in corpus (8)
- Metallic conduction at organic charge-transfer interfaces
- Current saturation and Coulomb interactions in organic single-crystal transistors
- Evidence for the formation of a Mott state in potassium-intercalated pentacene
- Hopping dynamics of interacting polarons
- Electron-phonon and electron-electron interactions in organic field effect transistors
- Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors
- Effects of different electron-phonon couplings on spectral and transport properties of small molecule single-crystal organic semiconductors
- On the interface polaron formation in organic field-effect transistors