Hopping dynamics of interacting polarons

Abstract

We derive an effective cluster model to address the transport properties of mutually interacting small polarons. We propose a decoupling scheme where the hopping dynamics of any given particle is determined by separating out explicitly the degrees of freedom of its environment, which are treated as a statistical bath. The general cavity method developed here shows that the long-range Coulomb repulsion between the carriers leads to a net increase of the thermal activation barrier for electrical transport, and hence to a sizable reduction of the carrier mobility. A mean-field calculation of this effect is provided, based on the known correlation functions of the interacting liquid in two and three dimensions. The present theory gives a natural explanation of recent experiments performed in organic field-effect transistors with highly polarizable gate dielectrics, and might well find application in other classes of polaronic systems such as doped transition-metal oxides.

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Cited by in corpus (4)

• Polaron Transport in Organic Crystals: Temperature Tuning of Disorder Effects
• Monte Carlo simulation based on dynamic disorder model in organic semiconductors: From bandlike to hopping transport
• Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules
• On the interface polaron formation in organic field-effect transistors