Unified picture for diluted magnetic semiconductors

Abstract

For already a decade the field of diluted magnetic semiconductors (DMS) is one of the hottest. In spite of the great success of material specific Density Functional Theory (DFT) to provide accurately critical Curie temperatures ($T_C$) in various III-V based materials, the ultimate search for a unifying model/theory was still an open issue. Many crucial questions were still without answer, as for example: Why, after one decade, does GaMnAs still exhibit the highest $T_C$? Is there any intrinsic limitations or any hope to reach room temperature? How to explain in a unique theory the proximity of GaMnAs to the metal-insulator transition, and the change from RKKY couplings in II-VI materials to the double exchange regime in GaMnN? The aim of the present work is to provide this missing theory. We will show that the key parameter is the position of the Mn level acceptor and that GaMnAs has the highest $T_C$ among III-V DMS. Our theory (i) provides an overall understanding, (ii) is quantitatively consistent with existing DFT based studies, (iii) able to explain both transport and magnetic properties in a broad variety of DMS and (iv) reproduces the $T_C$ obtained from first principle studies for many materials including both GaMnN and GaMnAs. The model also reproduces accurately recent experimental data of the optical conductivity of GaMnAs and predicts those of other materials.

5 figures includes, accepted for publication in Eur. Phys. Lett

References in corpus (14)

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• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• Different origin of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N
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• On-site Coulomb interaction and the magnetism of (GaMn)N and (GaMn)As
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• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in
• Why RKKY exchange integrals are inappropriate to describe ferromagnetism in diluted magnetic semiconductors
• Compensation, interstitial defects and ferromagnetism in diluted semiconductors
• Non-perturbative $J_{pd}$ model and ferromagnetism in dilute magnets
• Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

Cited by in corpus (20)

• An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs
• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Nanoscale inhomogeneities: A new path toward high Curie temperature ferromagnetism in diluted materials
• Valence-band structure of ferromagnetic semiconductor (InGaMn)As
• Influence of non-magnetic impurity scattering on the spin dynamics in diluted magnetic semiconductors
• Quantum kinetic equations for the ultrafast spin dynamics of excitons in diluted magnetic semiconductor quantum wells after optical excitation
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP
• Magnetic spin excitations in Mn doped GaAs : A model study
• Determination of the Fermi Level Position in Dilute Magnetic Ga${}_{1-x}$Mn${}_x$N Films
• Many-body correlations brought to light in absorption spectra of diluted magnetic semiconductors
• Robustness of flat band superconductivity against disorder in a two-dimensional Lieb lattice model
• Spontaneous magnetization in presence of nanoscale inhomogeneities in diluted magnetic systems
• Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models
• Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors
• Spin-wave excitations in presence of nanoclusters of magnetic impurities
• Spin dynamics of hot excitons in diluted magnetic semiconductors with spin-orbit interaction
• Curie temperatures of the concentrated and diluted Kondo-lattice model as a possible candidate to describe magnetic semiconductors and metals
• Exchange coupling and Mn valency in GaN doped with Mn and co-doped with Mg
• Flux-induced strengthening of the magnetic couplings in a flat-band diamond chain