Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
arXiv:1010.1368 · doi:10.1063/1.3535957
Abstract
We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.
3 pages, 3 figures; accepted for publication in Applied Physics Letters
References in corpus (9)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Optical Properties of III-Mn-V Ferromagnetic Semiconductors
- Onset of ferromagnetism in low-doped GaMnAs
- Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
- Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting
- Compositional tuning of ferromagnetism in Ga1-xMnxP
- Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy
- Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
- Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen