Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP

Abstract

We demonstrate the control of the hole concentration in Ga1-xMnxP over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 K to 7.5 K is remarkably similar to that observed in Ga1-xMnxAs despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-xMnxP is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation.

arXiv comment3 pages, 3 figures; accepted for publication in Applied Physics Letters

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Cited by in corpus (6)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Electronic Structure of the Dilute Magnetic Semiconductor $G{a}_{1-x}M{n}_{x}P$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
• Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
• Investigation of a possible electronic phase separation in the magnetic semiconductors Ga${}_{1-x}$Mn${}_x$As and Ga${}_{1-x}$Mn${}_x$P by means of fluctuation spectroscopy
• Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors