activity
20032022
most citedDiluted II-VI Oxide Semiconductors with Multiple Band Gaps

294 citations · 1.2k across the 30 of their papers we have counts for

collaborators

30 papers

cond-mat.mtrl-sci2022

Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking

Edy Cardona, Matthew K. Horton, Daniel Paulo-Wach +6

Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-pe…

cond-mat.mtrl-sci2020★ 48 cited

Chemical trends of deep levels in van der Waals semiconductors

Penghong Ci, Xuezeng Tian, Jun Kang +11

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no e…

cond-mat.mtrl-sci2018★ 14 cited

Electronic Structure of the Dilute Magnetic Semiconductor from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission

Armela Keqi, Mathias Gehlmann, Giuseppina Conti +18

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) and compared it to that of an undoped reference sample, using h…

cond-mat.mtrl-sci2016★ 11 cited

Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor

J. N. Heyman, A. M. Schwartzberg, K. M. Yu +5

We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the con…

cond-mat.mtrl-sci2015★ 23 cited

On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

P. C. Rogge, M. E. Foster, J. M. Wofford +3

We have used low-energy electron diffraction and microscopy to compare the growth of graphene on hydrogen-free Ge(111) and Ge(110) from an atomic carbon flux. Growth on Ge(110) lea…

cond-mat.mtrl-sci2015★ 38 cited

Real-time observation of epitaxial graphene domain reorientation

Paul C. Rogge, Konrad Thürmer, Michael E. Foster +3

Graphene films grown by vapor deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electro…