Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting

Abstract

We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films have all of the characteristic signatures of the strong p-d interaction of holes and Mn ions observed in the dilute hole-mediated ferromagnetic phase. The ferromagnetic and electrical transport properties of II-PLM films correspond to the peak substitutional Mn concentration meaning that the non-uniform Mn depth distribution is unimportant in determining the film properties. Good quantitative agreement is found with films grown by low temperature molecular beam epitaxy (LT-MBE) and having the similar substitutional Mn_Ga composition. Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free from interstitial Mn_I because of the high temperature processing. At high Mn implantation doses the kinetics of solute redistribution during solidification alone determine the maximum resulting Mn_Ga concentration. Uniaxial anisotropy between in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAs giving evidence for this being an intrinsic property of the carrier-mediated ferromagnetic phase.

References in corpus (4)

• Theory of ferromagnetic (III,Mn)V semiconductors
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Onset of ferromagnetism in low-doped GaMnAs
• Compositional tuning of ferromagnetism in Ga1-xMnxP

Cited by in corpus (8)

• Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
• Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
• Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
• Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
• High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
• Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen
• Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy
• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP