most citedMetal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

36 citations · 115 across the 5 of their papers we have counts for

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5 papers

cond-mat.mtrl-sci20089 cited

Compensation-dependent in-plane magnetization reversal processes in Ga1-xMnxP1-ySy

P. R. Stone, C. Bihler, M. Kraus +5

We report the effect of dilute alloying of the anion sublattice with S on the in-plane uniaxial magnetic anisotropy and magnetization reversal process in Ga1-xMnxP as measured by b…

cond-mat.mtrl-sci200836 cited

Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

P. R. Stone, K. Alberi, S. K. Z. Tardif +4

We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a met…

cond-mat.mtrl-sci200833 cited

Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting

M. A. Scarpulla, R. Farshchi, P. R. Stone +4

We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser me…

cond-mat.mtrl-sci200715 cited

Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

Peter R. Stone, Jeffrey W. Beeman, Kin M. Yu +1

We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with…

cond-mat.mtrl-sci200722 cited

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

C. Bihler, M. Kraus, H. Huebl +7

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMn…