Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism

Abstract

We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4 % As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 K to 60 K (100 K to 65 K) upon the introduction of 3.1 % P (1% N) into the As sublattice.

arXiv comment16 pages, 4 figures

References in corpus (11)

• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
• Weak localization in GaMnAs: evidence of impurity band transport
• Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N
• Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
• Enhancing $T_c$ in ferromagnetic semiconductors
• Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting
• Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
• Compositional tuning of ferromagnetism in Ga1-xMnxP

Cited by in corpus (11)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
• Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
• Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy
• Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Ferromagnetism and infrared electrodynamics of Ga${}_{1-x}$Mn${}_x$As}
• Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
• Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP
• Compensation-dependence of magnetic and electrical properties in Ga1-xMnxP
• Trends in Ferromagnetism in Mn doped dilute III-V alloys from a density functional perspective