activity
20042023
most citedSuppression of compensating native defect formation during semiconductor processing via excess carriers

42 citations · 134 across the 11 of their papers we have counts for

collaborators

11 papers

physics.app-ph2023

Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature

Matthew P. Hautzinger, Xin Pan, Steven C. Hayden +14

Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are…

cond-mat.mtrl-sci2023★ 1 cited

Thin film TaAs: developing a platform for Weyl semimetal devices

Jocienne N. Nelson, Anthony D. Rice, Rafal Kurleto +12

MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wid…

cond-mat.mtrl-sci2022★ 17 cited

Direct link between disorder, mobility and magnetoresistance in topological semimetals

Jocienne N. Nelson, Anthony D. Rice, Chase Brooks +7

The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the us…

cond-mat.mtrl-sci2019★ 20 cited

Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them

Anthony Rice, Kwangwook Park, Eamonn Hughes +2

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and h…

cond-mat.mtrl-sci2017★ 11 cited

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Kirstin Alberi, Michael A. Scarpulla

Herein we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors…

cond-mat.mtrl-sci2017

Tailoring Heterovalent Interface Formation with Light

Kwangwook Park, Kirstin Alberi

Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. Howev…