Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Abstract

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.

29 pages, 25 figures

References in corpus (10)

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• Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
• An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs
• Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
• Ferromagnetism and infrared electrodynamics of Ga${}_{1-x}$Mn${}_x$As}
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• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
• Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models
• Trend of the magnetic anisotropy for individual Mn dopants near the (110) GaAs surface
• Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films
• Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al
• Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies