Magnetic circular dichroism from the impurity band in III-V diluted magnetic semiconductors

Abstract

The magnetic circular dichroism of III-V diluted magnetic semiconductors, calculated within a theoretical framework suitable for highly disordered materials, is shown to be dominated by optical transitions between the bulk bands and an impurity band formed from magnetic dopant states. The theoretical framework incorporates real-space Green's functions to properly incorporate spatial correlations in the disordered conduction band and valence band electronic structure, and includes extended and localized electronic states on an equal basis. Our findings reconcile unusual trends in the experimental magnetic circular dichroism in III-V DMSs with the antiferromagnetic p-d exchange interaction between a magnetic dopant spin and its host.

arXiv comment5 pages, 4 figures

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Cited by in corpus (9)

• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
• Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
• Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy
• Ferromagnetism and infrared electrodynamics of Ga${}_{1-x}$Mn${}_x$As}
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band