Spatial structure of Mn-Mn acceptor pairs in GaAs
arXiv:cond-mat/0505536 · doi:10.1103/PhysRevLett.95.256402
Abstract
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn -doped layers grown on differently oriented substrates.
arXiv comment4 pages, 4 figures
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Cited by in corpus (7)
- Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
- Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface
- Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
- Magnetic circular dichroism from the impurity band in III-V diluted magnetic semiconductors
- Magnetic interactions of substitutional Mn pairs in GaAs
- Chern number spins of Mn acceptor magnets in GaAs
- Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies